(Free) DLP : ESD Issues and Challenges in Si Nanometer Devices by Prof. Dr. MK Radhakrishnan

IEEE EDS Malaysia Chapter with the collaboration with IEEE EDS UKM Student Branch Chapter is proud to invite you to the IEEE Distinguished Lecture (DL) 2016, which will be held as follows:

 

Date :          7 November 2016 (Monday)

Time :          9:45am10.45 am

Venue :        Meeting Room, Level 5 Research Complex, UKM

 

**Admission is FREE, please register at https://goo.gl/forms/fErfraRDEaoikOzp1

Kindly register by 2 November 2016.

 

Attached is the flyer. Please feel free to disseminate to your colleagues.

For any enquiries, kindly contact me via email to badariah@ukm.edu.my or Mr Mohd Nuriman at iman.nawi@ieee.org.

 

We look forward to see you there!

 

Best regards,

Assoc. Prof. Dr. Badariah Bais

Chair

IEEE EDS Malaysia Chapter

 

Summary

Electrostatic discharge (ESD) is one of the major threats in the semiconductor industry. As the device dimensions shrink to sub-l00nm level, the issues related to ESP. becomes more predominant, so that the solutions become more difficult. This talk gives a glimpse of the challenges faced from the device and circuit design point of view, process technology generations and device testing and qualification. How the ESD impact on the devices and the energy transfer through various technologies and ESD protection structures will be discussed. How the device design, layout and processing can affect the ESD protection and what type of minimal variations can make the impact critical will be illustrated with case studies. Various aspects of device ESD qualification based on different models of electrostatic discharge will be discussed to demonstrate how the semiconductor industry cares for the ESD protection as technology progresses. Further, the emphasis will be given to depict how the devices can fail due to ESD and also how to distinguish between ESD and EOS (Electrical Overstress). At nanometer technology regime the impact of ESD on devices is multi fold and much different from earlier generation devices. Using the appropriate protection structures and its compatibility to the core technology becomes significant. Even the layout becomes critical. Various types of failure mechanisms associated with different ESD issues will be discussed using case studies.

Various aspects of ESD prevention will also be summarized.

 

Bio:

Dr. M.K. Radhakrishnan is the Founder Director of NanoRel LLP -Technical Consultants Singapore providing analysis based solutions to microelectronic industries for improving reliability of devices. As a researcher in the area of device failure analysis and reliability physics for more than 40 years, he worked with the Institute of Microelectronics Singapore, Philips, ST Microelectronics and ISRO. He also served as Adjunct Professor at National University of Singapore (1994-2004). Dr. Radhakrishnan is the IEEE EDS Vice-President of Regions & Chapters and a Member of Board of Governors of IEEE Electron Devices Society. He is an lEEE EDS Distinguished Lecturer from 1997. He serves as the Editor-in-Chief of IEEE EDS Newsletter, Editor of IEEE Journal of Electron Devices (IEEE JEDS), Editorial BoardMember of Microelectronics Reliability Journal (UK), Editor of the European Journal Facta Universitas and Guest Editor to IEEE TDMR. He was General Chair for IEEE conferences IPF A 1999 and IEDST 2009 and Chairman of IEEE EDlRel/CPMT Singapore Chapter (2000-2001). As a technical consultant he works with many MNCs in Asia and Europe and a number of Higher Education Institutions. He has more than 60 research publications in the area of device failure analysis, reliability and ESD. He is a Fellow of IETE, Senior Member of IEEE, Member of EDF AS and ESDA.

Bookmark the permalink.

Comments are closed.