Postgraduate Vacancies : PhD (Optoelectronics) – Monash University Malaysia


 Field – Gallium Nitride (GaN) Light-Emitting Diodes Technology 

Gallium nitride (GaN) is set to take over as silicon power devices reach their limits. GaN is a binary III/V direct bandgap semiconductor commonly. It has emerged as an attractive candidate        for the semiconductor technology due to its key characteristics: high dielectric strength, high operating temperature, high current density, high speed switching and low on-resistance. This   research project will cover gallium nitride fabrication for power electronic applications, characterization work, well as some device simulation. This is a collaborative research with top-notch industrial partners.


Contact: Dr Chang Wei Sea for more information (

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