Field – Gallium Nitride (GaN) Light-Emitting Diodes Technology
Gallium nitride (GaN) is set to take over as silicon power devices reach their limits. GaN is a binary III/V direct bandgap semiconductor commonly. It has emerged as an attractive candidate for the semiconductor technology due to its key characteristics: high dielectric strength, high operating temperature, high current density, high speed switching and low on-resistance. This research project will cover gallium nitride fabrication for power electronic applications, characterization work, monash.edu)as well as some device simulation. This is a collaborative research with top-notch industrial partners.
Contact: Dr Chang Wei Sea for more information (firstname.lastname@example.org)